Pulsed
Laser Deposition PLD of thin films using
excimer laser LPX 305i and five deposition chambers |
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PLD-G-chamber up to 4-inch substrate
diameter, multi-target equipment
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PLD-M-chamber with
heater for 15x15 mm² substrates, multi-target equipment,
RF-radical source
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PLD-S-chamber
with 4-inch diam. heater, multi-target equipment
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PLD-E-chamber with multi-target equipment,
3-inch diam. heater, in-situ spektroscopic ellipsometry. |
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PLD-Q-chamber
for gas pressure in mbar-range, for nano-heterostructures
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DC-sputtering chamber for Au, Pt, Ti, Cr, Ag,... |
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Surface
analysis of structure and
morphology by electron diffraction RHEED |
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Secondary
neutrals mass spectrometry SNMS Leybold
INA 3 for chemical analysis and depth profiling
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Surface
profiler DEKTAK 3030
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Scan of critical current density of
double-sided high-Tc superconducting thin films up to 71 x 75 mm² area
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RCL-measurement with control of sample
temperature from -35 up to
+85°C |
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Scanning Tunneling
Microscope STM
"Beetle STM"
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Sintering
furnace up to
1200°C (chamber) and 1800°C (tube),
ball mills,
press moulds for PLD target preparation, in tube furnace also thermal
growth of ZnO-nanostructures.
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Microwave vector network analyser Anritsu-Wiltron 37347A up to 20 GHz.
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Zeiss optical
microscope Axiolab with
CCD-camera
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