P03: Amorphous and Crystalline Thin Films of CuI and CuI-Based Alloys by Sputtering
Dr. Sofie Vogt
This project aims to investigate the growth of semiconducting amorphous and crystalline CuI-based alloy thin films by sputtering
for the use as transparent p-type channel layers in active devices. Sputtering is a versatile growth method, which is well established
for industrial semiconductor deposition. The high carrier density of unintentionally doped sputtered crystalline CuI thin films currently impedes its use as active channel layer.
Therefore, a cation doping or alloying with silver and indium, respectively, are intended to reduce the free carrier density and preserve high hole mobility in crystalline CuI thin films.
Further, a cation alloying is investigated to achieve amorphous CuI-based alloy thin films. Due to the lack of grain boundaries, devices fabricated on amorphous thin films exhibit more uniform performance as required for upscaling.
In-situ treatments such as thermal annealing and capping are optimized to stabilize the amorphous thin films.
