P05: Electrical Properties of CuI Thin Films and Bulk Material and Fabrication of CuI-Based
Devices
Dr. habil. Holger von Wenckstern
Within this project, strategies for fabricating ohmic as well as rectifying contacts to amorphous and
crystalline CuI-based thin films and bulk material will be developed. With that, low field transport properties
and properties of shallow as well as deeper defect states will be characterized. Doping limits will be
determined for various substitutional acceptor elements and the potential of CuI as transparent pconducting
electrode material will be evaluated. Semiconducting layers will be used to fabricate Schottky
barrier diodes and pn-heterojunctions. Further, these diodes will be implemented as gate electrode within
field-effect transistors.
