SANDiE Partner P13
Université Paris XI, Orsay, France
Contribution to the SANDiE workpackage "long wavelength"
Growth of Ge/Si self-assembled quantum dots by chemical vapor deposition. Processing of two-dimensional photonic crystals on silicon-on-insulator containing Ge/Si self-assembled islands. Optical characterization of the photonic devices.
Contribution to the SANDiE workpackage "intersublevel"
Study of electronically coupled quantum dots (grown by partner 11). Experimental study of polaron dynamics. First observation of polaron Rabi oscillation.
Contribution to the SANDiE workpackage "modeling"
Three-dimensional 8 band k.p calculation of electronic structure. Strain field calculation using valence force field method. 1D 30-band k.p calculation of electronic structure with Si/SiGe heterostructures. 3D finite difference time domain calculation of photonic band diagram of devices containing Ge/Si quantum dots.
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