SANDiE  –  Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics  –  Network of Excellence

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SANDiE Partner P17

Universidad de Cádiz, Spain

The University of Cadiz (UCA) contributes to the Network of Excellence SANDiE through the characterization and design of semiconductor self-assembled nanostructures (SAN) by advanced high resolution imaging and analytical transmission electron microscopy (TEM) techniques. 12 staff members and 6 PhD students participate in this network.

The UCA team is developing methodologies based on high resolution electron microscopy techniques to improve the understanding of the strain and compositional distribution at the nanoscale (up to atomic column resolution in some cases) on a large variety of semiconductor self-assembled nanostructures that will form part of optoelectronic and electronic devices. The materials, processing methods and/or topics in which we are working and collaborating with other partners in the network can be summarized as follows:

1. MBE InAs/InP quantum wires
2. MBE InAs/GaAs quantum dots and rings
3. MBE InGaAsN/GaAs SAN
4. Metastable sphalerite MgS layers for the growth of CdSe quantum dots
5. InAs quantum dots grown on metamorphic compositionally graded InGaAs/GaAs buffer layers.
6. FIB processing of GaAs substrates for the epitaxial growth of semiconductor SAN
7. InAs quantum dots on AlGaAs/GaAs substrates.
8. GaN quantum dots grown on AlN/SiC/Si substrates
9. InN quantum dots grown on sapphire substrates
10. Development of high resolution electron microscopy imaging and analytical methodologies to extract structural and compositional information from semiconductor SAN

UCA is also in charge of the establishment and coordination of the educational activities (workshops, school, training courses and joint PhDs) organised in the network, to increase the training index.

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