SANDiE Partner P23

Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany


We prepare quantum dots in the Stranski-Krastanow growth mode using strained InGaAs on GaAs and SiGe on Si. The quantum dots are defect-free and can be incorporated coherently into the host material, which renders them interesting candidates for electronic and optoelectronic applications. Our work concentrates on the fundamental growth mechanisms and the lateral alignment of these nanostructures. We also release thin solid films from substrate surfaces, which cause the formation of a novel class of free-standing nano- and micrometer sized objects. The technique allows accurate positioning of novel semiconductor and hybrid material nanostructures, and therefore constitutes a powerful method to combine top-down and bottom-up approach in nanotechnology.

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last update: 28 February 2019, A. Weber