SANDiE Partner P28
Innolume GmbH, Germany
Innolume's products target the following opto-electronic applications in the computer, communications, military, medical and industrial markets:
- Quantum dot edge-emitting laser and VCSEL epi-wafers for 0.85-1.3 µm
- Quantum dot infra-red detector epi-wafers (QDIPs)
- Custom design epi-wafers
- High power passive mode-locked lasers for 1.064-1.3µm with frequencies from 5-40 GHz
- High power quantum dot edge-emitting lasers chips and laser bars for 1.2- 1.3µm
Current Quantum Dot fabrication techniques for QD diode lasers is based on effects of self assembly of semiconductor nanostructures resulting in the self-organized growth of uniform nanometer-scale islands. Under the proper choice of deposition conditions, a layer of material with a lattice constant different from that of the substrate may spontaneously transform to an array of three-dimensional (3D) islands. The size of these islands provides quantization in all three directions making them Quantum Dots.
Developed over last 10 years, the technology of InAs Quantum Dots in a GaAs matrix has enabled new types of diode lasers revealing numerous advantages over conventional quantum well lasers:
- Extension of the wavelength range on GaAs substrate to 1.3 µm - due to the possibility of varying the size and composition of InAs-GaAs QDs
- Higher tolerance to intentional degradation due to carrier localization in QDs
- Reduced facet surface overheating
- Possibility of fabricating deep-etched ridge stripe lasers without surface recombination at open side walls (100 A/cm2, 4 µm-wide stripe)
- Low threshold current density and high efficiency
- High temperature stability - due to the strong carrier confinement in deep quantum dots
- Broad tunability of the lasing wavelength in external-cavity applications - due to broad gain spectrum
- Reduced optical nonlinear effects - due to the gain spectrum engineering resulting in suppression of beam filamentation and chirp
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