Magnetoresistance at grain boundaries artificially introduced into magnetite films

Journal of Magnetism and Magnetic Materials 242-245, 450 (2002)

M. Ziese, R. Höhne, N. H. Hong, J. Dienelt, K. Zimmer and P. Esquinazi

Abstract

Magnetotransport data of step-edge junctions fabricated in magnetite (Fe3O4) films are presented. An enhancement of the low field magnetoresistance of these step-edge junctions as evidenced by measurements with the electrical current along and across the step edges was observed. This is especially pronounced in a film on patterned MgAl2O4 which additionally shows a significant geometrically induced resistivity anisotropy. The enhanced magnetoresistance might be caused by spin scattering at magnetically disordered regions near the step edges.