Veröffentlichungen

6) P. Schlupp, H. von Wenckstern, M. Grundmann
Electrical properties of vertical p-NiO/n-Ga2O3 and p-ZnCo2O4/n-Ga2O3 pn-heterodiodes
phys. stat. sol. (a), accepted (2019)

5) M. Grundmann
Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures
J. Appl. Phys. 124(18), 185302:1-10 (2018)

4) Max Kneiß, Philipp Storm, Gabriele Benndorf, Marius Grundmann, Holger von Wenckstern
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets
ACS Comb. Sci. 20(11), 643-652 (2018)

3) M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann
Tin-Assisted Heteroepitaxial PLD-growth of β-Ga2O3 Thin Films with High Crystalline Quality
APL Mater. 7(2), 022516:1-11 (2018)

2) A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Structural, optical and electrical properties of orthorhombic κ-(InxGa1-x)2O3:Sn thin films
APL Mater., accepted (2018)

1) Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films
Proc. SPIE 10533, 105330C:1-8 (2018)

Impressum