Veröffentlichungen

10) Jonas Michel, Daniel Splith, Julius Rombach, Alexandra Papadogianni, Theresa Berthold, Stefan Krischok, Marius Grundmann, Oliver Bierwagen, Holger von Wenckstern, Marcel Himmerlich Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In₂O₃
ACS Appl. Mater. Interfaces 11(30), 27073-27087 (2019)

9) A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann
Influence of oxygen pressure on growth of Si-doped (Al_xGa_1-x)₂O₃ thin films on c-sapphire substrates by pulsed laser deposition
ECS J. Solid State Sci. Techn. 8(7), Q3217-Q2020 (2019)

8) Stefan Müller, Laurenz Thyen, Daniel Splith, Anna Reinhardt, Holger von Wenckstern, Marius Grundmann
High-quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate
ECS J. Solid State Sci. Techn. 8(7), Q3126-Q3132 (2019)

7) Chaker Fares, Max Kneiß, Holger von Wenckstern, Marko Tadjer, Fan Ren, Eric Lambers, Marius Grundmann, S.J. Pearton
Band Alignment of Atomic Layer Deposited SiO₂ and Al₂O₃ on (Al_xGa_1-x)₂O₃ for x=0.2-0.65
ECS J. Solid State Sci. Techn. 8(6), P351-P356 (2019)

6) P. Schlupp, D. Splith, H. von Wenckstern, M. Grundmann
Electrical properties of vertical p-NiO/n-Ga₂O₃ and p-ZnCo₂O₄/n-Ga₂O₃ pn-heterodiodes
Phys. Status Solidi A 216(7), 1800729:1-6 (2019)

5) M. Grundmann
Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures
J. Appl. Phys. 124(18), 185302:1-10 (2018)

4) Max Kneiß, Philipp Storm, Gabriele Benndorf, Marius Grundmann, Holger von Wenckstern
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets
ACS Comb. Sci. 20(11), 643-652 (2018)

3) M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann
Tin-Assisted Heteroepitaxial PLD-growth of β-Ga₂O₃ Thin Films with High Crystalline Quality
APL Mater. 7(2), 022516:1-11 (2018)

2) A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Structural, optical and electrical properties of orthorhombic κ-(In_xGa_1-x)₂O₃:Sn thin films
APL Mater. 7(2), 022525:1-9 (2019)

2a) A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Erratum: "Structural, optical, and electrical properties of orthorhombic ?-(InxGa1-x)2O3 thin films"
[APL Mater. 7, 022525 (2019)]

1) Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films
Proc. SPIE 10533, 105330C:1-8 (2018)