SANDiE Partner P01

Universität Leipzig, Germany

In the semiconductor physics and chemistry groups at Leipzig university, we focus our research on the investigation of novel photonic and electronic semiconductor materials and phenomena and the development of devices for key areas such as internet communication, data storage, displays, illumination, environmental monitoring and life sciences. These areas exhibit rapid economic growth and ample employment opportunities.

Our current research topics in the framework of self-assembled nanostructures are:

  • nanotechnology and self-assembling techniques for novel materials and devices based on atomic monolayers, quantum wires and quantum dots
  • ZnO-based materials for the green, blue and UV spectral range
  • arsenide and phosphide-based materials for the infra-red
  • intersublevel transitions for the mid-infrared spectral range
  • light-matter interaction of active materials with dielectric structures such as microcavities
  • device preparation and characterization (photodetectors, light emitting and laser diodes)
  • advanced theoretical modeling of semiconductor material and device properties

Our materials basis is provided by pulsed laser deposition (PLD) for the growth of oxide semiconductors [such as ZnO, (Mg,Cd)ZnO, ZnO:(Ga,Al,N,Sb,Fe,Co,Ni,...)] and oxide semiconductor heterostructures and nanostructures. PLD is also used to grow ferroelectrics, high temperature superconductors and ultra-hard materials. Metal-organic vapor-phase epitaxy (MOVPE) is used for the preparation of III-V compounds.

Facilities are available for the characterization of structural, electrical and optical material properties, among them high resolution X-ray diffraction, atomic force microscopy, transmission electron microscopy, IV- and CV-spectroscopy, admittance, DLTS, optical DLTS, Hall effect, optical transmission and reflection, photoluminescence, excitation spectroscopy, Fourier transform spectroscopy, cathodoluminescence, photocurrent microscopy, generalized spectroscopic ellipsometry from the mid-infrared to the UV. Photonic and electronic device properties can be characterized with several set-ups, incl. on-wafer testing up to 30 GHz and fA-regime.

Homepage of Universität Leipzig

Homepage of Semiconductor Physics Group

last update: 21 March 2019, A. Weber