J. Appl. Phys. 117, 075301 (2015)

J. Barzola-Quiquia, T. Lehmann, M. Stiller, D. Spemann, P. Esquinazi, and P. Häussler

Abstract

We present a new method to obtain topological insulator Bi₂Se₃ thin films with a centimeter large lateral length. To produce amorphous Bi₂Se₃ thin films, we have used a sequential flashevaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing, the samples transform into the rhombohedral Bi₂Se₃ crystalline structure which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance and the Hall effect at different temperatures between 2 K and 275 K. At temperatures T ≤ 50 K and fields B ≤ 1 T, we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.

DOI