Appl. Phys. Lett. 107, 022403 (2015)
Y. Kumar, F. Bern, J. Barzola-Quiquia, I. Lorite, and P. Esquinazi
Abstract
We report magnetotransport studies on microstructured ZnO film grown by pulsed laser deposition in N2 atmosphere on a-plane Al2O3 substrates and the effect of low energy H+-implantation. Non-linearity has been found in the magnetic field dependent Hall resistance, which decreases with temperature. We explain this effect with a two-band model assuming the conduction through two different parallel channels having different types of charge carriers. Reduced non-linearity after H+-implantation in the grown film is due to the shallow-donor effect of hydrogen giving rise to an increment in the electron density, reducing the effect of the other channel.