Mechanism of grain-boundary magnetoresistance in Fe3O4 films

THE EUROPEAN PHYSICAL JOURNAL B – CONDENSED MATTER AND COMPLEX SYSTEMS 28, 415 (2002)

M. Ziese, R. Höhne, H.C. Semmelhack, H. Reckentin, N.H. Hong and P. Esquinazi

Abstract

The magnetotransport properties of magnetite films with different microstructures were investigated in order to identify prerequisites for the attainment of a large tunnelling magnetoresistance in polycrystalline samples. Epitaxial films on MgAl2O4, polycrystalline films on Al2O3 and rough MgAl2O4 substrates and a polycrystalline La0.7Ca0.3MnO3 film on MgO were compared. Although grain boundaries induce a large high-field magnetoresistance in magnetite films, the low-field magnetoresistance characteristic for spin-polarized tunnelling was virtually absent in these samples. Two factors might be responsible for this behaviour: (1) grain boundaries in magnetite are conducting and do not form tunnelling barriers and (2) the spin-polarization near grain boundaries is suppressed due to non-stoichiometry.