Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration

Phys. Rev. B 80, 195402 (2009)

A. Arndt, D. Spoddig, P. Esquinazi, J. Barzola-Quiquia, S. Dusari, and T. Butz


We investigate the dependence of the electrical resistivity and magnetoresistance of single crystalline micrometer-sized graphite samples of a few tens of nanometers thick on the defect concentration produced by irradiation at low fluences. We show that the carrier density of graphite n is extremely sensitive to the induced defects for concentrations as low as ∼0.1 ppm and followsn∼1/RV2 with RV the distance between defects in the graphene plane. These and Shubnikov-de Haas oscillations results indicate that at least a relevant part of the carrier densities measured in graphite is not intrinsic.