Origin of the giant negative photoresistance of ZnO single crystals

J. Appl. Phys. 108, 073530 (2010)

J. Barzola-Quiquia, P. Esquinazi, M. Villafuerte, S. P. Heluani, A. Pöppl, and K. Eisinger


We have measured the temperature dependence (30 K ≤ T ≤ 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T<200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.