Journal of Materials Science 45, 6174 (2010)

F. Golmar, M. Villafuerte, A. Mudarra Navarro, C. E. Rodríguez Torres, J. Barzola-Quiquia, P. Esquinazi and S. P. Heluani

Abstract

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie–Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.