Appl. Phys. Lett. 99, 112503 (2011)
C. Zapata, M. Khalid, G. Simonelli, M. Villafuerte, S. P. Heluani, and P. Esquinazi
Abstract
Magnetic field dependent photoresistivity was measured at 280 K in ZnO ferromagnetic films grown on r-plane Al2O3 under a N2 atmosphere. A correlation between the negative magneto photoresistivity and the existence of defect-induced magnetic order was found. The effect of magnetic field on the transient photoresistivity is to slow down the recombination process enhancing the photocarriers density. The experimental results demonstrate the possibility of tuning photocarriers life time using magnetic field in diluted magnetic semiconductors.
