J. Appl. Phys. 115, 133101 (2014)
M. Villafuerte, J.M. Ferreyra, C. Zapata, J. Barzola-Quiquia, F. Iikawa, P. Esquinazi, S.P. Heluani, M.M. de Lima Jr., and A. Cantarero
Abstract
The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm−3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.